SMD-5962-91757 REV B

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 8 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON

contributor author	DLA - CC - DLA Land and Maritime
date accessioned	2017-09-04T18:25:05Z
date available	2017-09-04T18:25:05Z
date copyright	06/08/2009
date issued	2009
identifier other	IICLMCAAAAAAAAAA.pdf
identifier uri	https://yse.yabesh.ir/std/handle/yse/207348
description abstract	This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
language	English
title	SMD-5962-91757 REV B	num
title	MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 8 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON	en
type	standard
page	24
status	Active
tree	DLA - CC - DLA Land and Maritime:;2009
contenttype	fulltext