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SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, 1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US, JAN, JANTX, JANTXV, AND JANS

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:25:14Z
date available2017-09-04T18:25:14Z
date copyright06/04/2012
date issued2012
identifier otherIINRVEAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/207508
description abstractThis specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
languageEnglish
titleMIL-PRF-19500/590Jnum
titleSEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, 1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US, JAN, JANTX, JANTXV, AND JANSen
typestandard
page28
statusActive
treeDLA - CC - DLA Land and Maritime:;2012
contenttypefulltext


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