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IEEE C62.35
Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components
| contributor author | IEEE - The Institute of Electrical and Electronics Engineers, Inc. | |
| date accessioned | 2017-09-04T18:26:08Z | |
| date available | 2017-09-04T18:26:08Z | |
| date copyright | 03/25/2010 | |
| date issued | 2010 | |
| identifier other | IKMTXEAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/208256 | |
| description abstract | This standard applies to two terminal or multiple terminal silicon avalanche breakdown diodes (ABD), which are one type of surge protective device component (SPDC). In this document, these devices will be called ABDs. ABDs limit (clamp) transient voltages and divert transient currents. This standard contains terms, symbols and definitions, and provides test methods for verifying ratings and measuring device characteristics. Service conditions and failure mode are also provided. This standard may also apply to other silicon surge protective device components with similar V-I characteristics. | |
| language | English | |
| title | IEEE C62.35 | num |
| title | Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components | en |
| type | standard | |
| page | 26 | |
| status | Active | |
| tree | IEEE - The Institute of Electrical and Electronics Engineers, Inc.:;2010 | |
| contenttype | fulltext |
