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MIL-PRF-19500/631B
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7397, AND 2N7398, JANSD AND JANSR
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:27:10Z | |
| date available | 2017-09-04T18:27:10Z | |
| date copyright | 03/09/2004 | |
| date issued | 2004 | |
| identifier other | INJYEBAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/209392 | |
| description abstract | This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization), power transistors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500. Intended Use: The notes specified in MIL-PRF-19500 are applicable to this specification. | |
| language | English | |
| title | MIL-PRF-19500/631B | num |
| title | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7397, AND 2N7398, JANSD AND JANSR | en |
| type | standard | |
| page | 26 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2004 | |
| contenttype | fulltext |
