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Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor, P-Channel Silicon Type 2N7411 JANSD and JANSR

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:27:55Z
date available2017-09-04T18:27:55Z
date copyright07/15/2011
date issued2011
identifier otherIPGSMEAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/210097
languageEnglish
titleMIL-PRF-19500/639A VALID NOTICE 2num
titleSemiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor, P-Channel Silicon Type 2N7411 JANSD and JANSRen
typestandard
page1
statusActive
treeDLA - CC - DLA Land and Maritime:;2011
contenttypefulltext


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