درباره ما
MIL-PRF-19500/607B
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON, TYPE 2N7337 JAN, JANTX, JANTXV, JANS, AND JANHC
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:50:28Z | |
| date available | 2017-09-04T18:50:28Z | |
| date copyright | 08/06/2004 | |
| date issued | 2004 | |
| identifier other | KUYSFBAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std/handle/yse/231956 | |
| description abstract | This specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). One level of product assurance is provided for unencapsulated device. Intended Use: The notes specified in MIL-PRF-19500 are applicable to this specification. | |
| language | English | |
| title | MIL-PRF-19500/607B | num |
| title | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON, TYPE 2N7337 JAN, JANTX, JANTXV, JANS, AND JANHC | en |
| type | standard | |
| page | 20 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2004 | |
| contenttype | fulltext |
