JEDEC JESD57

Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation

contributor author	JEDEC - Solid State Technology Association
date accessioned	2017-09-04T17:23:45Z
date available	2017-09-04T17:23:45Z
date copyright	35400
date issued	1996
identifier other	ZZXNCAAAAAAAAAAA.pdf
identifier uri	http://yse.yabesh.ir/std;quein=autho123393FD081DAC4/handle/yse/146960
description abstract	This test method defines requirements and procedures for ground simulation and single event effects (SEE) and implementation of the method in testing integrated circuits. This standard is valid when using a cyclotron or Van de Graaff accelerator. Microcircuits under test must be delidded. The ions used at the facilities have an atomic number Z > 2. It does not apply to SEE testing that uses protons, neutrons, or other lighter particles. This standard is designed to eliminate any misunderstanding between users of the method and test facilities, to minimize delays, and to promote standardization of testing and test data.
language	English
title	JEDEC JESD57	num
title	Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation	en
type	standard
page	49
status	Active
tree	JEDEC - Solid State Technology Association:;1996
contenttype	fulltext
subject keywords	Heavy Ion Irradiation
subject keywords	Single-Event Effects - SEE