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JEDEC JESD60A
A Procedure for Measuring P-Channel MOSFET Hot-Carrier- Induced Degradation Under DC Stress
| contributor author | JEDEC - Solid State Technology Association | |
| date accessioned | 2017-09-04T15:54:53Z | |
| date available | 2017-09-04T15:54:53Z | |
| date copyright | 09/01/2004 | |
| date issued | 2004 | |
| identifier other | QTSEGBAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;quein=autho123393FD081DAC4/handle/yse/58289 | |
| description abstract | This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that accurate comparisons can be made between different technologies. The measurements specified should be viewed as a starting pint in the characterization and benchmarking of the trasistor manufacturing process. | |
| language | English | |
| title | JEDEC JESD60A | num |
| title | A Procedure for Measuring P-Channel MOSFET Hot-Carrier- Induced Degradation Under DC Stress | en |
| type | standard | |
| page | 24 | |
| status | Active | |
| tree | JEDEC - Solid State Technology Association:;2004 | |
| contenttype | fulltext | |
| subject keywords | CHC | |
| subject keywords | DC Stress | |
| subject keywords | Gate Current | |
| subject keywords | Hot Carrier | |
| subject keywords | MOSFETs | |
| subject keywords | P-Channel - MOSFET | |
| subject keywords | PMOS | |
| subject keywords | Transistor |
