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JEDEC JESD353
The Measurement of Transistor Noise Figure at Frequencies up to 20 kHz by Sinusoidal Signal-Generator Method
Organization:
JEDEC - Solid State Technology Association
Year: 2009
Abstract: INTRODUCTION
The following noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution.
Figure 1 shows a suitable method for measuring the transistor noise figure at frequencies equal to or less than 20 kHz. The values for the generator source resistance (as seen by the transistor), Rs, the d-c operating conditions, and free-air, lead or case temperature will depend upon the application and upon the optimum conditions for any particular device. These quantities, as well as the test frequency, should be specified. Common-emitter (common-source) configuration is assumed unless otherwise indicated.
The following noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution.
Figure 1 shows a suitable method for measuring the transistor noise figure at frequencies equal to or less than 20 kHz. The values for the generator source resistance (as seen by the transistor), Rs, the d-c operating conditions, and free-air, lead or case temperature will depend upon the application and upon the optimum conditions for any particular device. These quantities, as well as the test frequency, should be specified. Common-emitter (common-source) configuration is assumed unless otherwise indicated.
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| contributor author | JEDEC - Solid State Technology Association | |
| date accessioned | 2017-09-04T16:01:16Z | |
| date available | 2017-09-04T16:01:16Z | |
| date copyright | 04/01/1968 (R 2009) | |
| date issued | 2009 | |
| identifier other | RKQISCAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;quein=autho123393FD081DAC4/handle/yse/64483 | |
| description abstract | INTRODUCTION The following noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution. Figure 1 shows a suitable method for measuring the transistor noise figure at frequencies equal to or less than 20 kHz. The values for the generator source resistance (as seen by the transistor), Rs, the d-c operating conditions, and free-air, lead or case temperature will depend upon the application and upon the optimum conditions for any particular device. These quantities, as well as the test frequency, should be specified. Common-emitter (common-source) configuration is assumed unless otherwise indicated. | |
| language | English | |
| title | JEDEC JESD353 | num |
| title | The Measurement of Transistor Noise Figure at Frequencies up to 20 kHz by Sinusoidal Signal-Generator Method | en |
| type | standard | |
| page | 14 | |
| status | Active | |
| tree | JEDEC - Solid State Technology Association:;2009 | |
| contenttype | fulltext |