• 0
    • ارسال درخواست
    • حذف همه
    • Industrial Standards
    • Defence Standards
  • درباره ما
  • درخواست موردی
  • فهرست استانداردها
    • Industrial Standards
    • Defence Standards
  • راهنما
  • Login
  • لیست خرید شما 0
    • ارسال درخواست
    • حذف همه
View Item 
  •   YSE
  • Industrial Standards
  • JEDEC - Solid State Technology Association
  • View Item
  •   YSE
  • Industrial Standards
  • JEDEC - Solid State Technology Association
  • View Item
  • All Fields
  • Title(or Doc Num)
  • Organization
  • Year
  • Subject
Advanced Search
JavaScript is disabled for your browser. Some features of this site may not work without it.

Archive

JEDEC JESD35-A

Procedure for the Wafer-Level Testing of Thin Dielectrics

Organization:
JEDEC - Solid State Technology Association
Year: 2001

Abstract: The revised JESD35 is intended for use in the MOS Integrated Circuit manufacturing industry. It describes procedures developed for estimating the overall integrity and reliability of thin gate oxides. Three basic test procedures are described, the Voltage-Ramp (V-Ramp), the Current-Ramp (J-Ramp) and the new Constant Current (Bounded J-Ramp) test. Each test is designed for simplicity, speed and ease of use. The standard has been updated to include breakdown criteria that are more robust in detecting breakdown in thinner gate oxides that may not experience hard thermal breakdown.
URI: http://yse.yabesh.ir/std;quein=autho123393FD081DAC4/handle/yse/89323
Subject: Thin Dielectrics
Collections :
  • JEDEC - Solid State Technology Association
  • Download PDF : (699.9Kb)
  • Show Full MetaData Hide Full MetaData
  • Statistics

    JEDEC JESD35-A

Show full item record

contributor authorJEDEC - Solid State Technology Association
date accessioned2017-09-04T16:26:05Z
date available2017-09-04T16:26:05Z
date copyright04/01/2001
date issued2001
identifier otherTZJHABAAAAAAAAAA.pdf
identifier urihttp://yse.yabesh.ir/std;quein=autho123393FD081DAC4/handle/yse/89323
description abstractThe revised JESD35 is intended for use in the MOS Integrated Circuit manufacturing industry. It describes procedures developed for estimating the overall integrity and reliability of thin gate oxides. Three basic test procedures are described, the Voltage-Ramp (V-Ramp), the Current-Ramp (J-Ramp) and the new Constant Current (Bounded J-Ramp) test. Each test is designed for simplicity, speed and ease of use. The standard has been updated to include breakdown criteria that are more robust in detecting breakdown in thinner gate oxides that may not experience hard thermal breakdown.
languageEnglish
titleJEDEC JESD35-Anum
titleProcedure for the Wafer-Level Testing of Thin Dielectricsen
typestandard
page47
statusActive
treeJEDEC - Solid State Technology Association:;2001
contenttypefulltext
subject keywordsThin Dielectrics
subject keywordsThin Gate Oxides
subject keywordsWafer-Level Testing
DSpace software copyright © 2017-2020  DuraSpace
نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
yabeshDSpacePersian
 
DSpace software copyright © 2017-2020  DuraSpace
نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
yabeshDSpacePersian