JEDEC JESD35-A
Procedure for the Wafer-Level Testing of Thin Dielectrics
Organization:
JEDEC - Solid State Technology Association
Year: 2001
Abstract: The revised JESD35 is intended for use in the MOS Integrated Circuit manufacturing industry. It describes procedures developed for estimating the overall integrity and reliability of thin gate oxides. Three basic test procedures are described, the Voltage-Ramp (V-Ramp), the Current-Ramp (J-Ramp) and the new Constant Current (Bounded J-Ramp) test. Each test is designed for simplicity, speed and ease of use. The standard has been updated to include breakdown criteria that are more robust in detecting breakdown in thinner gate oxides that may not experience hard thermal breakdown.
Subject: Thin Dielectrics
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contributor author | JEDEC - Solid State Technology Association | |
date accessioned | 2017-09-04T16:26:05Z | |
date available | 2017-09-04T16:26:05Z | |
date copyright | 04/01/2001 | |
date issued | 2001 | |
identifier other | TZJHABAAAAAAAAAA.pdf | |
identifier uri | http://yse.yabesh.ir/std;quein=autho123393FD081DAC4/handle/yse/89323 | |
description abstract | The revised JESD35 is intended for use in the MOS Integrated Circuit manufacturing industry. It describes procedures developed for estimating the overall integrity and reliability of thin gate oxides. Three basic test procedures are described, the Voltage-Ramp (V-Ramp), the Current-Ramp (J-Ramp) and the new Constant Current (Bounded J-Ramp) test. Each test is designed for simplicity, speed and ease of use. The standard has been updated to include breakdown criteria that are more robust in detecting breakdown in thinner gate oxides that may not experience hard thermal breakdown. | |
language | English | |
title | JEDEC JESD35-A | num |
title | Procedure for the Wafer-Level Testing of Thin Dielectrics | en |
type | standard | |
page | 47 | |
status | Active | |
tree | JEDEC - Solid State Technology Association:;2001 | |
contenttype | fulltext | |
subject keywords | Thin Dielectrics | |
subject keywords | Thin Gate Oxides | |
subject keywords | Wafer-Level Testing |