Show simple item record

Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components

contributor authorJEDEC - Solid State Technology Association
date accessioned2017-09-04T16:26:30Z
date available2017-09-04T16:26:30Z
date copyright40148
date issued2009
identifier otherUAOKPCAAAAAAAAAA.pdf
identifier urihttp://yse.yabesh.ir/std;quein=autho123393FD081DAC4/handle/yse/89731
description abstractThis new test method describes a uniform method for establishing charged-device model electrostatic discharge withstand thresholds. The charged-device-model simulates charging/discharging events that occur in production equipment and processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing. One of many examples is a device sliding down a shipping tube hitting a metal surface. Discharges to devices on unterminated circuit assemblies are also well-modeled by the CDM test. DM ESD events not only reduce assembly yields but can also produce device damage that goes undetected by factory test and later is the cause of a latent failure.
languageEnglish
titleJEDEC JESD22-C101Enum
titleField-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Componentsen
typestandard
page18
statusRevised
treeJEDEC - Solid State Technology Association:;2009
contenttypefulltext
subject keywordsCDM
subject keywordsCharged Device Model (CDM)
subject keywordsESD
subject keywordsESD - Charged Device Model
subject keywordsTest Method - Field-Induced Charged-Device Model


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record