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JEDEC JESD22-C101E
Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components
Organization:
JEDEC - Solid State Technology Association
Year: 2009
Abstract: This new test method describes a uniform method for establishing charged-device model electrostatic discharge withstand thresholds. The charged-device-model simulates charging/discharging events that occur in production equipment and processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing. One of many examples is a device sliding down a shipping tube hitting a metal surface. Discharges to devices on unterminated circuit assemblies are also well-modeled by the CDM test. DM ESD events not only reduce assembly yields but can also produce device damage that goes undetected by factory test and later is the cause of a latent failure.
Subject: CDM
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JEDEC JESD22-C101E
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| contributor author | JEDEC - Solid State Technology Association | |
| date accessioned | 2017-09-04T16:26:30Z | |
| date available | 2017-09-04T16:26:30Z | |
| date copyright | 40148 | |
| date issued | 2009 | |
| identifier other | UAOKPCAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;quein=autho123393FD081DAC4/handle/yse/89731 | |
| description abstract | This new test method describes a uniform method for establishing charged-device model electrostatic discharge withstand thresholds. The charged-device-model simulates charging/discharging events that occur in production equipment and processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing. One of many examples is a device sliding down a shipping tube hitting a metal surface. Discharges to devices on unterminated circuit assemblies are also well-modeled by the CDM test. DM ESD events not only reduce assembly yields but can also produce device damage that goes undetected by factory test and later is the cause of a latent failure. | |
| language | English | |
| title | JEDEC JESD22-C101E | num |
| title | Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components | en |
| type | standard | |
| page | 18 | |
| status | Revised | |
| tree | JEDEC - Solid State Technology Association:;2009 | |
| contenttype | fulltext | |
| subject keywords | CDM | |
| subject keywords | Charged Device Model (CDM) | |
| subject keywords | ESD | |
| subject keywords | ESD - Charged Device Model | |
| subject keywords | Test Method - Field-Induced Charged-Device Model |