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JEDEC JESD28-1
N-Channel MOSFET Hot Carrier Data Analysis
Organization:
JEDEC - Solid State Technology Association
Year: 2001
Abstract: This addendum provides data analysis examples useful in analyzing MOSFET n-channel hot-carrier-induced degradation data. This addendum to JESD28 (Hot carrier n-channel testing standard) suggests hot-carrier data analysis techniques.
Subject: HCI
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| contributor author | JEDEC - Solid State Technology Association | |
| date accessioned | 2017-09-04T18:02:12Z | |
| date available | 2017-09-04T18:02:12Z | |
| date copyright | 09/01/2001 | |
| date issued | 2001 | |
| identifier other | GBGDKBAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;quein=autho162s936D081DAC4/handle/yse/185189 | |
| description abstract | This addendum provides data analysis examples useful in analyzing MOSFET n-channel hot-carrier-induced degradation data. This addendum to JESD28 (Hot carrier n-channel testing standard) suggests hot-carrier data analysis techniques. | |
| language | English | |
| title | JEDEC JESD28-1 | num |
| title | N-Channel MOSFET Hot Carrier Data Analysis | en |
| type | standard | |
| page | 15 | |
| status | Active | |
| tree | JEDEC - Solid State Technology Association:;2001 | |
| contenttype | fulltext | |
| subject keywords | HCI | |
| subject keywords | Hot Carrier | |
| subject keywords | Hot Electrons | |
| subject keywords | MOSFET | |
| subject keywords | N-Channel |