MIL–STD–750–4

DLA - CC - DLA Land and Maritime

TEST METHOD STANDARD DIODE ELECTRICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 4: TEST METHODS 4000 THROUGH 4999

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Year: 2012

Abstract: Purpose. Part 4 of this test method standard establishes uniform test methods for the basic electrical testing of semiconductor diodes to determine resistance to deleterious effects of natural elements and conditions surrounding military operations. For the purpose of this standard, the term "devices" includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This part of a multipart test method standard is intended to apply only to semiconductor devices.
Numbering system. The test methods are designated by numbers assigned in accordance with the following system:
Classification of tests. The electrical test methods included in this part are numbered 4000 to 4999 inclusive.
Test method revisions. Test method revisions are numbered consecutively using a period to separate the test method number and the revision number. For example, 4011.4 designates the fourth revision of test method 4011.
Method of reference. When applicable, test methods contained herein shall be referenced in the individual specification or specification sheet by specifying the test method number, and the details required in the summary of the applicable test method shall be listed. To avoid the necessity for changing specifications that refer to this test methods of this standard, the revision number should not be used when referencing test methods. (For example: Use 4011 versus 4011.4.)Intended Use: The intended use of this test method standard is to establish appropriate conditions for testing semiconductor devices to give test results that simulate the actual service conditions existing in the field. This test method standard has been prepared to provide uniform test methods, controls, and procedures for determining with predictability the suitability of such devices within military, aerospace and special application equipment.

URI: http://yse.yabesh.ir/std;query=autho162sear3FCDCAC4261598F1EFDEC014A/handle/yse/224685

Subject: Destructive tests

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DLA - CC - DLA Land and Maritime

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contributor author	DLA - CC - DLA Land and Maritime
date accessioned	2017-09-04T18:43:15Z
date available	2017-09-04T18:43:15Z
date copyright	01/03/2012
date issued	2012
identifier other	ALYSTEAAAAAAAAAA.pdf
identifier uri	http://yse.yabesh.ir/std;query=autho162sear3FCDCAC4261598F1EFDEC014A/handle/yse/224685
description abstract	Purpose. Part 4 of this test method standard establishes uniform test methods for the basic electrical testing of semiconductor diodes to determine resistance to deleterious effects of natural elements and conditions surrounding military operations. For the purpose of this standard, the term "devices" includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This part of a multipart test method standard is intended to apply only to semiconductor devices. Numbering system. The test methods are designated by numbers assigned in accordance with the following system: Classification of tests. The electrical test methods included in this part are numbered 4000 to 4999 inclusive. Test method revisions. Test method revisions are numbered consecutively using a period to separate the test method number and the revision number. For example, 4011.4 designates the fourth revision of test method 4011. Method of reference. When applicable, test methods contained herein shall be referenced in the individual specification or specification sheet by specifying the test method number, and the details required in the summary of the applicable test method shall be listed. To avoid the necessity for changing specifications that refer to this test methods of this standard, the revision number should not be used when referencing test methods. (For example: Use 4011 versus 4011.4.)Intended Use: The intended use of this test method standard is to establish appropriate conditions for testing semiconductor devices to give test results that simulate the actual service conditions existing in the field. This test method standard has been prepared to provide uniform test methods, controls, and procedures for determining with predictability the suitability of such devices within military, aerospace and special application equipment.
language	English
title	MIL–STD–750–4	num
title	TEST METHOD STANDARD DIODE ELECTRICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 4: TEST METHODS 4000 THROUGH 4999	en
type	standard
page	165
status	Active
tree	DLA - CC - DLA Land and Maritime:;2012
contenttype	fulltext
subject keywords	Destructive tests
subject keywords	Electrical characteristics tests
subject keywords	Laboratory Suitability
subject keywords	Non–destructive tests