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JEDEC JESD28-A
Procedure for Measuring N-Channel MOSFET Hot-Carrier-Induced Degradation under DC Stress
Organization:
JEDEC - Solid State Technology Association
Year: 2001
Abstract: This document describes an accelerated test for measuring the hot-carrier-induced degradation of a single n-channel MOSFET using dc bias. The purpose of this document is to specify a minimum set of measurements so that valid comparisons can be made between different technologies, IC processes, and process variations in a simple, consistent and controlled way. The measurements specified should be viewed as a starting point in the characterization and benchmarking of the transistor manufacturing process.
Subject: DC Stress
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| contributor author | JEDEC - Solid State Technology Association | |
| date accessioned | 2017-09-04T17:13:59Z | |
| date available | 2017-09-04T17:13:59Z | |
| date copyright | 37226 | |
| date issued | 2001 | |
| identifier other | YZPEUAAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;query=autho1826AF679D4049A961598F1EFDEC014A0Facilities%88Engineering%20Command%226EFDEC9FCD0Facilities%20Engineering%20Command%22/handle/yse/137471 | |
| description abstract | This document describes an accelerated test for measuring the hot-carrier-induced degradation of a single n-channel MOSFET using dc bias. The purpose of this document is to specify a minimum set of measurements so that valid comparisons can be made between different technologies, IC processes, and process variations in a simple, consistent and controlled way. The measurements specified should be viewed as a starting point in the characterization and benchmarking of the transistor manufacturing process. | |
| language | English | |
| title | JEDEC JESD28-A | num |
| title | Procedure for Measuring N-Channel MOSFET Hot-Carrier-Induced Degradation under DC Stress | en |
| type | standard | |
| page | 20 | |
| status | Active | |
| tree | JEDEC - Solid State Technology Association:;2001 | |
| contenttype | fulltext | |
| subject keywords | DC Stress | |
| subject keywords | Hot Carrier Induced Degradation | |
| subject keywords | N-Channel MOSFET | |
| subject keywords | Test Method - Hot Carrier |