MIL-S-19500/131

Abstract

This specification covers the detail requirements for silicon, NPN, field flow, switching transistors (see <a>6.3</a>) having the following characteristics at T_A = 25&#176;C (see <a>3.2</a>): <a><img alt="TABLE" /></a> <br><a><img alt="TABLE" /></a> <b><u>Intended Use:</u></b> The transistors covered by this specification are designed for use, particularly; in switching circuits operating in excess of a 5-megacycle rate. <strong>NOTICE: When Government drawings, specifications, or other data are used for any purpose other than in connection with a definitely related Government procurement operation, the United States Government thereby incurs no responsibility nor any obligation whatsoever; and the fact that the Government may have formulated, furnished, or in any way supplied the said drawings, specifications, or other data is not to be regarded by implication or otherwise as in any manner licensing the holder or any other person or corporation, or conveying any rights or permission to manufacture, use, or sell any patented invention that may in any way be related thereto.</strong> <a name="RJSKDAAAAAAAAAAA-X30" id="RJSKDAAAAAAAAAAA-X30"><img alt="FIGURE 1. OUTLINE DIMENSIONS." src="" /></a> <a name="RJSKDAAAAAAAAAAA-X31" id="RJSKDAAAAAAAAAAA-X31"><img alt="Figure 2. Power-versus-temperature ratings" src="" /></a> <a name="RJSKDAAAAAAAAAAA-X32" id="RJSKDAAAAAAAAAAA-X32"><img alt="FIGURE 3 PULSE-RESPONSE TEST CIRCUITS" src="" /></a> <br>