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Elevated Temperature Life Test for Laser Diodes

contributor authorTIA - Telecommunications Industry Association
date accessioned2017-09-04T18:23:58Z
date available2017-09-04T18:23:58Z
date copyright39387
date issued2007
identifier otherIFMWBCAAAAAAAAAA.pdf
identifier urihttp://yse.yabesh.ir/std;query=autho47037D83FCDC49A961598F1EFDEC9FCD/handle/yse/206389
description abstractAlthough the test is intended as a means to obtain a set of parameters that describe the reliability of the device population, the determination of an activation energy due to either temperature or current density is beyond the scope of this FOTP. This test is directed toward semiconductor laser diodes used in telecommunication applications for transmission or pumping purposes. Unless otherwise noted, this procedure applies to all semiconductor laser diodes that can be operated in a CW mode of operation; this includes pump lasers, direct and externally modulated lasers for both digital and analog applications. Also, this test is intended for sub-mounted (unpackaged) devices.
languageEnglish
titleTIA TIA-455-130num
titleElevated Temperature Life Test for Laser Diodesen
typestandard
page18
statusActive
treeTIA - Telecommunications Industry Association:;2007
contenttypefulltext


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