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Draft BS EN 63378-6-1 Thermal standardization on semiconductor packages. Part 6-1. Thermal resistance and capacitance model for transient temperature prediction at junction and measurement points. Model creation method using a datasheet of semiconductor d
25/30511533 DC
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BSI - British Standards Institution
Year: 2025
BSI - British Standards Institution
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Draft BS EN 63378-6-1 Thermal standardization on semiconductor packages. Part 6-1. Thermal resistance and capacitance model for transient temperature prediction at junction and measurement points. Model creation method using a datasheet of semiconductor d
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| contributor author | BSI - British Standards Institution | |
| date accessioned | 2025-09-30T22:10:24Z | |
| date available | 2025-09-30T22:10:24Z | |
| date copyright | 09 April 2025 | |
| date issued | 2025 | |
| identifier isbn | - | |
| identifier other | 000000000030511533.pdf | |
| identifier uri | http://yse.yabesh.ir/std;query=autho4703ear79D/handle/yse/347293 | |
| language | English | |
| publisher | BSI - British Standards Institution | |
| title | Draft BS EN 63378-6-1 Thermal standardization on semiconductor packages. Part 6-1. Thermal resistance and capacitance model for transient temperature prediction at junction and measurement points. Model creation method using a datasheet of semiconductor d | en |
| title | 25/30511533 DC | num |
| type | Standard | |
| page | 16 | |
| status | Draft | |
| tree | BSI - British Standards Institution:;2025 | |
| contenttype | Fulltext |