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IPC TM-650 2.4.22.2
Substrate Curvature: Silicon Wafers with Deposited Dielectrics
Organization:
IPC - Association Connecting Electronics Industries
Year: 1995
Abstract: This test method establishes a procedure for determining the flatness of silicon wafers coated with deposited organic films.
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IPC TM-650 2.4.22.2
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| contributor author | IPC - Association Connecting Electronics Industries | |
| date accessioned | 2017-09-04T17:56:31Z | |
| date available | 2017-09-04T17:56:31Z | |
| date copyright | 07/01/1995 | |
| date issued | 1995 | |
| identifier other | FMLADAAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;query=authoF237ear369B7AC426159DD6EFDEC9FCD/handle/yse/179602 | |
| description abstract | This test method establishes a procedure for determining the flatness of silicon wafers coated with deposited organic films. | |
| language | English | |
| title | IPC TM-650 2.4.22.2 | num |
| title | Substrate Curvature: Silicon Wafers with Deposited Dielectrics | en |
| type | standard | |
| page | 2 | |
| status | Active | |
| tree | IPC - Association Connecting Electronics Industries:;1995 | |
| contenttype | fulltext |