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JEDEC JESD24-12
Thermal Impedance Measurement for Insulated Gate Bipolar Transistors (Delta VCE(on) Method) - (This is an alternative method to JEDEC Standard No. 24-6)
Organization:
JEDEC - Solid State Technology Association
Year: 2004
Abstract: The purpose of this test method is to measure the thermal impedance of the IGBT (Insulated Gate Bipolar Transistor) under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the collector-emitter on voltage, VCE(on), is used as the junction temperature indicator. This is an alternative method to JEDEC Standard No. 24-6.
Subject: Bipolar
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JEDEC JESD24-12
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| contributor author | JEDEC - Solid State Technology Association | |
| date accessioned | 2017-09-04T17:08:28Z | |
| date available | 2017-09-04T17:08:28Z | |
| date copyright | 06/01/2004 | |
| date issued | 2004 | |
| identifier other | BZKMFBAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;quessionid=2A40ear/handle/yse/132013 | |
| description abstract | The purpose of this test method is to measure the thermal impedance of the IGBT (Insulated Gate Bipolar Transistor) under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the collector-emitter on voltage, VCE(on), is used as the junction temperature indicator. This is an alternative method to JEDEC Standard No. 24-6. | |
| language | English | |
| title | JEDEC JESD24-12 | num |
| title | Thermal Impedance Measurement for Insulated Gate Bipolar Transistors (Delta VCE(on) Method) - (This is an alternative method to JEDEC Standard No. 24-6) | en |
| type | standard | |
| page | 16 | |
| status | Active | |
| tree | JEDEC - Solid State Technology Association:;2004 | |
| contenttype | fulltext | |
| subject keywords | Bipolar | |
| subject keywords | Gate | |
| subject keywords | Impedance | |
| subject keywords | Insulated | |
| subject keywords | Thermal | |
| subject keywords | Transistor |