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MIL-PRF-19500/427P
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Organization:
DLA - CC - DLA Land and Maritime
Year: 2013
Abstract: This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
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MIL-PRF-19500/427P
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| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:39:38Z | |
| date available | 2017-09-04T18:39:38Z | |
| date copyright | 06/20/2013 | |
| date issued | 2013 | |
| identifier other | JSNWDFAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;quessioutho4703177793325273135A68A10958014A/handle/yse/221258 | |
| description abstract | This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/427P | num |
| title | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | en |
| type | standard | |
| page | 24 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2013 | |
| contenttype | fulltext |