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MIL-PRF-19500/675E
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2, 2N7464T2, 2N7463U5 AND 2N7464U5 JANTXVR AND JANSR
Organization:
DLA - CC - DLA Land and Maritime
Year: 2013
Abstract: This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
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MIL-PRF-19500/675E
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| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T17:05:54Z | |
| date available | 2017-09-04T17:05:54Z | |
| date copyright | 03/25/2013 | |
| date issued | 2013 | |
| identifier other | YDNACFAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/129419 | |
| description abstract | This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/675E | num |
| title | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2, 2N7464T2, 2N7463U5 AND 2N7464U5 JANTXVR AND JANSR | en |
| type | standard | |
| page | 26 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2013 | |
| contenttype | fulltext |