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MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 128K X 8-BIT

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T17:21:13Z
date available2017-09-04T17:21:13Z
date copyright07/10/2000
date issued2000
identifier otherZSHUMAAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/144370
description abstractThis drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowered high reliability), class H (high reliability), and class K, (highest reliability) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
languageEnglish
titleSMD-5962-93156 REV Bnum
titleMICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 128K X 8-BITen
typestandard
page19
statusActive
treeDLA - CC - DLA Land and Maritime:;2000
contenttypefulltext


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