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SMD-5962-93156 REV B
MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 128K X 8-BIT
Organization:
DLA - CC - DLA Land and Maritime
Year: 2000
Abstract: This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowered high reliability), class H (high reliability), and class K, (highest reliability) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
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SMD-5962-93156 REV B
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| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T17:21:13Z | |
| date available | 2017-09-04T17:21:13Z | |
| date copyright | 07/10/2000 | |
| date issued | 2000 | |
| identifier other | ZSHUMAAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/144370 | |
| description abstract | This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowered high reliability), class H (high reliability), and class K, (highest reliability) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. | |
| language | English | |
| title | SMD-5962-93156 REV B | num |
| title | MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 128K X 8-BIT | en |
| type | standard | |
| page | 19 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2000 | |
| contenttype | fulltext |