درباره ما
MIL-PRF-19500/102B
SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D JAN
Organization:
DLA - CC - DLA Land and Maritime
Year: 2013
Abstract: This specification covers the performance requirements for a high-power, NPN, silicon transistor. One level of product assurance is provided for each device type.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Collections
:
-
Statistics
MIL-PRF-19500/102B
Show full item record
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T17:22:58Z | |
| date available | 2017-09-04T17:22:58Z | |
| date copyright | 2013.08.23 | |
| date issued | 2013 | |
| identifier other | ZXNDGFAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/146152 | |
| description abstract | This specification covers the performance requirements for a high-power, NPN, silicon transistor. One level of product assurance is provided for each device type.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/102B | num |
| title | SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D JAN | en |
| type | standard | |
| page | 11 | |
| status | Not for New Design | |
| tree | DLA - CC - DLA Land and Maritime:;2013 | |
| contenttype | fulltext |