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SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G AND H AND JANSR, F, G AND H

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T17:27:14Z
date available2017-09-04T17:27:14Z
date copyright08/19/2010
date issued2010
identifier otherCMLVXCAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/150383
description abstractThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
languageEnglish
titleMIL-PRF-19500/673Bnum
titleSEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G AND H AND JANSR, F, G AND Hen
typestandard
page21
statusActive
treeDLA - CC - DLA Land and Maritime:;2010
contenttypefulltext


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