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MIL-PRF-19500/673B
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G AND H AND JANSR, F, G AND H
Organization:
DLA - CC - DLA Land and Maritime
Year: 2010
Abstract: This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
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MIL-PRF-19500/673B
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| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T17:27:14Z | |
| date available | 2017-09-04T17:27:14Z | |
| date copyright | 08/19/2010 | |
| date issued | 2010 | |
| identifier other | CMLVXCAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/150383 | |
| description abstract | This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/673B | num |
| title | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G AND H AND JANSR, F, G AND H | en |
| type | standard | |
| page | 21 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2010 | |
| contenttype | fulltext |