• 0
    • ارسال درخواست
    • حذف همه
    • Industrial Standards
    • Defence Standards
  • درباره ما
  • درخواست موردی
  • فهرست استانداردها
    • Industrial Standards
    • Defence Standards
  • راهنما
  • Login
  • لیست خرید شما 0
    • ارسال درخواست
    • حذف همه
View Item 
  •   YSE
  • Defence Standards
  • DLA - CC - DLA Land and Maritime
  • View Item
  •   YSE
  • Defence Standards
  • DLA - CC - DLA Land and Maritime
  • View Item
  • All Fields
  • Title(or Doc Num)
  • Organization
  • Year
  • Subject
Advanced Search
JavaScript is disabled for your browser. Some features of this site may not work without it.

Archive

MIL–STD–750–3

TEST METHOD STANDARD TRANSISTOR ELECTRICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 3: TEST METHODS 3000 THROUGH 3999

Organization:
DLA - CC - DLA Land and Maritime
Year: 2012

Abstract: Purpose. Part 3 of this test method standard establishes uniform test methods for the electrical testing of semiconductor transistors to determine resistance to deleterious effects of natural elements and conditions surrounding military operations. For the purpose of this standard, the term "devices" includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This part of a multipart test method standard is intended to apply only to semiconductor devices.Intended Use: The intended use of this standard is to establish appropriate conditions for testing semiconductor devices to give test results that simulate the actual service conditions existing in the field. This test method standard has been prepared to provide uniform test methods, controls, and procedures for determining with predictability the suitability of such devices within military, aerospace and special application equipment.
URI: https://yse.yabesh.ir/std/handle/yse/152572
Subject: Electrical tests
Collections :
  • DLA - CC - DLA Land and Maritime
  • Download PDF : (3.049Mb)
  • Show Full MetaData Hide Full MetaData
  • Statistics

    MIL–STD–750–3

Show full item record

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T17:29:32Z
date available2017-09-04T17:29:32Z
date copyright01/03/2012
date issued2012
identifier otherCSJTTEAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/152572
description abstractPurpose. Part 3 of this test method standard establishes uniform test methods for the electrical testing of semiconductor transistors to determine resistance to deleterious effects of natural elements and conditions surrounding military operations. For the purpose of this standard, the term "devices" includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This part of a multipart test method standard is intended to apply only to semiconductor devices.Intended Use: The intended use of this standard is to establish appropriate conditions for testing semiconductor devices to give test results that simulate the actual service conditions existing in the field. This test method standard has been prepared to provide uniform test methods, controls, and procedures for determining with predictability the suitability of such devices within military, aerospace and special application equipment.
languageEnglish
titleMIL–STD–750–3num
titleTEST METHOD STANDARD TRANSISTOR ELECTRICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 3: TEST METHODS 3000 THROUGH 3999en
typestandard
page345
statusActive
treeDLA - CC - DLA Land and Maritime:;2012
contenttypefulltext
subject keywordsElectrical tests
subject keywordsLaboratory Suitability
subject keywordsNon–destructive tests
DSpace software copyright © 2017-2020  DuraSpace
نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
yabeshDSpacePersian
 
DSpace software copyright © 2017-2020  DuraSpace
نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
yabeshDSpacePersian