درباره ما
SMD-5962-95824
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, 8-BIT MICROPROCESSOR, MONOLITHIC SILICON
Year: 1996
Abstract: This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
The PIN shall be as shown in the following example:![CHART]()
Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
The device type(s) shall identify the circuit function as follows:
The device class designator shall be a single letter identifying the product assurance level as follows:
The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.
Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-prepared specification or drawing. Device class Q devices will replace device class M devices.
The PIN shall be as shown in the following example:
Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
The device type(s) shall identify the circuit function as follows:
Device type Generic number Circuit function 01 80C85RH Radiation Hardened, CMOS, 8-bit microprocessor
The device class designator shall be a single letter identifying the product assurance level as follows:
Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535
The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style Q CDIP2-T40 40 Dual-in-line package X See figure 1 42 ceramic flatpack
The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.
Supply voltage (VDD) - - - - - - - - - - - - - - - - - - - - - - +7.0 V dc Input, output or I/O voltage - - - - - - - - - - - - - - - - - - GND −0.3 V dc to VDD +0.3 V dc Storage temperature range (TSTG) - - - - - - - - - - - - - - - - −65°C to +150°C Junction temperature (TJ) - - - - - - - - - - - - - - - - - - - +175°C Lead temperature (soldering 10 seconds) (TS) - - - - - - - - - - +300°C Thermal resistance junction-to-case (ΘJC): Case outline Q - - - - - - - - - - - - - - - - - - - - - - - - 10°C/W Case outline X - - - - - - - - - - - - - - - - - - - - - - - - 13°C/W Thermal resistance junction-to-case (ΘJA): Case outline Q - - - - - - - - - - - - - - - - - - - - - - - - 45°C/W Case outline X - - - - - - - - - - - - - - - - - - - - - - - - 77°C/W Maximum package power dissipation TA = 125°C (PD):2/ Case outline Q - - - - - - - - - - - - - - - - - - - - - - - - 1.11 W Case outline X - - - - - - - - - - - - - - - - - - - - - - - - 0.65 W
Operating supply voltage range (VDD) - - - - - - - - - - - - - - +4.75 V dc to +5.25 V dc Ambient operating temperature range (TA) - - - - - - - - - - - - −55°C to +125°C Input low voltage range (VIL) - - - - - - - - - - - - - - - - - 0 V dc to +0.8 V dc Input high voltage range (VIH) - - - - - - - - - - - - - - - - - VDD −0.5 V dc to VDD Radiation features Total dose - - - - - - - - - - - - - - - - - - - - - - - - - - > 100 k Rads(SI) Transient upset - - - - - - - - - - - - - - - - - - - - - - - > 108 RAD(SI)/sec 3/ Single event phenomenon effective linear energy threshold, (LET) no upset single event upset - - - - - - - - - - - - - - - - - - - - - - 75 MEV/(mg/cm2) 3/ single event latchup - - - - - - - - - - - - - - - - - - - - - 120 MEV/(mg/cm2) 3/
Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-prepared specification or drawing. Device class Q devices will replace device class M devices.
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