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MIL-PRF-19500/616G
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS
Organization:
DLA - CC - DLA Land and Maritime
Year: 2009
Abstract: This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
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MIL-PRF-19500/616G
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| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T17:35:04Z | |
| date available | 2017-09-04T17:35:04Z | |
| date copyright | 04/17/2009 | |
| date issued | 2009 | |
| identifier other | DHDTLCAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/158016 | |
| description abstract | This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/616G | num |
| title | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS | en |
| type | standard | |
| page | 12 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2009 | |
| contenttype | fulltext |