• 0
    • ارسال درخواست
    • حذف همه
    • Industrial Standards
    • Defence Standards
  • درباره ما
  • درخواست موردی
  • فهرست استانداردها
    • Industrial Standards
    • Defence Standards
  • راهنما
  • Login
  • لیست خرید شما 0
    • ارسال درخواست
    • حذف همه
View Item 
  •   YSE
  • Defence Standards
  • DLA - CC - DLA Land and Maritime
  • View Item
  •   YSE
  • Defence Standards
  • DLA - CC - DLA Land and Maritime
  • View Item
  • All Fields
  • Title(or Doc Num)
  • Organization
  • Year
  • Subject
Advanced Search
JavaScript is disabled for your browser. Some features of this site may not work without it.

Archive

MIL-PRF-19500/156N (1)

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H

Organization:
DLA - CC - DLA Land and Maritime
Year: 2012

Abstract: This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
URI: https://yse.yabesh.ir/std/handle/yse/165170
Collections :
  • DLA - CC - DLA Land and Maritime
  • Download PDF : (113.1Kb)
  • Show Full MetaData Hide Full MetaData
  • Statistics

    MIL-PRF-19500/156N (1)

Show full item record

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T17:42:10Z
date available2017-09-04T17:42:10Z
date copyright03/13/2012
date issued2012
identifier otherDZWPUEAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/165170
description abstractThis specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
languageEnglish
titleMIL-PRF-19500/156N (1)num
titleSEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, Hen
typestandard
page13
statusActive
treeDLA - CC - DLA Land and Maritime:;2012
contenttypefulltext
DSpace software copyright © 2017-2020  DuraSpace
نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
yabeshDSpacePersian
 
DSpace software copyright © 2017-2020  DuraSpace
نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
yabeshDSpacePersian