DSCC-VID-V62/13606

MICROCIRCUIT, MEMORY, 3.3 V CMOS FIRST-IN, FIRST-OUT, MONOLITHIC SILICON

contributor author	DLA - CC - DLA Land and Maritime
date accessioned	2017-09-04T18:10:14Z
date available	2017-09-04T18:10:14Z
date copyright	06/20/2013
date issued	2013
identifier other	GWUWDFAAAAAAAAAA.pdf
identifier uri	https://yse.yabesh.ir/std/handle/yse/193291
description abstract	This drawing documents the general requirements of a high performance 3.3 V CMOS first-in, first-out (FIFO) microcircuit, with an operating temperature range of -55°C to +125°C.
language	English
title	DSCC-VID-V62/13606	num
title	MICROCIRCUIT, MEMORY, 3.3 V CMOS FIRST-IN, FIRST-OUT, MONOLITHIC SILICON	en
type	standard
page	36
status	Active
tree	DLA - CC - DLA Land and Maritime:;2013
contenttype	fulltext