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MIL-PRF-19500/689
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R
Organization:
DLA - CC - DLA Land and Maritime
Year: 2001
Abstract: This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Intended Use: The notes specified in MIL-PRF-19500 are applicable to this specification.
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MIL-PRF-19500/689
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| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:12:31Z | |
| date available | 2017-09-04T18:12:31Z | |
| date copyright | 02/28/2001 | |
| date issued | 2001 | |
| identifier other | HCQKPAAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/195493 | |
| description abstract | This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Intended Use: The notes specified in MIL-PRF-19500 are applicable to this specification. | |
| language | English | |
| title | MIL-PRF-19500/689 | num |
| title | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R | en |
| type | standard | |
| page | 22 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2001 | |
| contenttype | fulltext |