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SMD-5962-95625 REV B
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16-MEG USER-CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
Organization:
DLA - CC - DLA Land and Maritime
Year: 2013
Abstract: This drawing documents three product assurance class levels consisting of non-traditional (device class N), high reliability (device class Q), and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
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SMD-5962-95625 REV B
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| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:19:48Z | |
| date available | 2017-09-04T18:19:48Z | |
| date copyright | 06/14/2013 | |
| date issued | 2013 | |
| identifier other | HUUWDFAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/202444 | |
| description abstract | This drawing documents three product assurance class levels consisting of non-traditional (device class N), high reliability (device class Q), and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. | |
| language | English | |
| title | SMD-5962-95625 REV B | num |
| title | MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16-MEG USER-CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON | en |
| type | standard | |
| page | 36 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2013 | |
| contenttype | fulltext |