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SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT, TYPES 1N6304, 1N6305, 1N6306, AND R TYPES, JAN, JANTX, JANTXV, JANHC, AND JANKC

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:19:49Z
date available2017-09-04T18:19:49Z
date copyright39373
date issued2007
identifier otherHUWBBCAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/202466
description abstractThis specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
languageEnglish
titleMIL-PRF-19500/550Cnum
titleSEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT, TYPES 1N6304, 1N6305, 1N6306, AND R TYPES, JAN, JANTX, JANTXV, JANHC, AND JANKCen
typestandard
page1
statusActive
treeDLA - CC - DLA Land and Maritime:;2007
contenttypefulltext


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