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MIL-PRF-19500/550C
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT, TYPES 1N6304, 1N6305, 1N6306, AND R TYPES, JAN, JANTX, JANTXV, JANHC, AND JANKC
Organization:
DLA - CC - DLA Land and Maritime
Year: 2007
Abstract: This specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
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MIL-PRF-19500/550C
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| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:19:49Z | |
| date available | 2017-09-04T18:19:49Z | |
| date copyright | 39373 | |
| date issued | 2007 | |
| identifier other | HUWBBCAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/202466 | |
| description abstract | This specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/550C | num |
| title | SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT, TYPES 1N6304, 1N6305, 1N6306, AND R TYPES, JAN, JANTX, JANTXV, JANHC, AND JANKC | en |
| type | standard | |
| page | 1 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2007 | |
| contenttype | fulltext |