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MIL-PRF-19500/552F (1)
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6469 THROUGH 1N6476, 1N6469US THROUGH 1N6476US, 1N6469URS THROUGH 1N6476URS, JAN, JANTX, AND JANTXV
Organization:
DLA - CC - DLA Land and Maritime
Year: 2013
Abstract: This specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
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MIL-PRF-19500/552F (1)
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| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:28:02Z | |
| date available | 2017-09-04T18:28:02Z | |
| date copyright | 09/12/2013 | |
| date issued | 2013 | |
| identifier other | IPPFGFAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/210221 | |
| description abstract | This specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/552F (1) | num |
| title | SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6469 THROUGH 1N6476, 1N6469US THROUGH 1N6476US, 1N6469URS THROUGH 1N6476URS, JAN, JANTX, AND JANTXV | en |
| type | standard | |
| page | 20 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2013 | |
| contenttype | fulltext |