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IEEE Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment Ports -- Part 3: Silicon PN-Junction

IEEE Std C62.42.3-2017

contributor authorIEEE - The Institute of Electrical and Electronics Engineers, Inc.
date accessioned2018-07-30T06:09:58Z
date available2018-07-30T06:09:58Z
date copyrightMarch 13 2018
date issued2018
identifier isbn9781504440561
identifier other08316271.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/258434
description abstractSurge protective components (SPCs) used in power and telecom surge protective devices (SPDs) and equipment ports are covered in the IEEE C62.42(TM) guide series. This part, Part 3 of the series, describes silicon PN-Junction clamping diode SPCs and covers technology variants, including forward biased semiconductor diodes, Zener breakdown semiconductor diodes, avalanche breakdown semiconductor diodes, punch-through semiconductor bipolar junction transistor diodes, and fold-back semiconductor bidirectional transistor diodes, as well as component construction; characteristics; ratings; and application examples.
languageEnglish
titleIEEE Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment Ports -- Part 3: Silicon PN-Junctionen
titleIEEE Std C62.42.3-2017num
typestandard
page42
treeIEEE - The Institute of Electrical and Electronics Engineers, Inc.:;2018
contenttypefulltext
subject keywordsIEEE C62.42.3(TM)
subject keywordsPN-junction
subject keywordsZener breakdown
subject keywordsavalanche breakdown
subject keywordsclamping
subject keywordsdiode
subject keywordsfold back
subject keywordsforward biased
subject keywordspunch-through
subject keywordssilicon
subject keywordsAvalanche breakdown
subject keywordsClamping
subject keywordsIEEE Standards
subject keywordsSurge protection
subject keywordsIEEE standards
subject keywordsZener diodes
subject keywordsZener effect
subject keywordsavalanche breakdown
subject keywordsbipolar transistors
subject keywordselemental semiconductors
subject keywordsp-n junctions
subject keywordssilicon
subject keywordssurge protection
subject keywordsIEEE C62 guide series
subject keywordsIEEE guide
subject keywordsSPD
subject keywordsZener breakdown semiconductor diodes
subject keywordsavalanche breakdown semiconductor diodes
subject keywordscomponent construction
subject keywordsequipment ports
subject keywordsfold-back semiconductor bidirectional transistor diodes
subject keywordsforward biased semiconductor diodes
subject keywordspunch-through semiconductor bipolar junction transistor diodes
subject keywordssilicon PN-junction clamping diode SPC
subject keywordssurge protective components
subject keywordssurge protective devices
subject keywordstechnology variants
identifier DOI10.1109/IEEESTD.2018.8316271


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