IEEE Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment Ports -- Part 3: Silicon PN-Junction

IEEE - The Institute of Electrical and Electronics Engineers, Inc.

IEEE Std C62.42.3-2017

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IEEE - The Institute of Electrical and Electronics Engineers, Inc.

Year: 2018

Abstract: Surge protective components (SPCs) used in power and telecom surge protective devices (SPDs) and equipment ports are covered in the IEEE C62.42(TM) guide series. This part, Part 3 of the series, describes silicon PN-Junction clamping diode SPCs and covers technology variants, including forward biased semiconductor diodes, Zener breakdown semiconductor diodes, avalanche breakdown semiconductor diodes, punch-through semiconductor bipolar junction transistor diodes, and fold-back semiconductor bidirectional transistor diodes, as well as component construction; characteristics; ratings; and application examples.

URI: https://yse.yabesh.ir/std/handle/yse/258434

Subject: IEEE C62.42.3(TM)

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IEEE - The Institute of Electrical and Electronics Engineers, Inc.

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IEEE Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment Ports -- Part 3: Silicon PN-Junction

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contributor author	IEEE - The Institute of Electrical and Electronics Engineers, Inc.
date accessioned	2018-07-30T06:09:58Z
date available	2018-07-30T06:09:58Z
date copyright	March 13 2018
date issued	2018
identifier isbn	9781504440561
identifier other	08316271.pdf
identifier uri	https://yse.yabesh.ir/std/handle/yse/258434
description abstract	Surge protective components (SPCs) used in power and telecom surge protective devices (SPDs) and equipment ports are covered in the IEEE C62.42(TM) guide series. This part, Part 3 of the series, describes silicon PN-Junction clamping diode SPCs and covers technology variants, including forward biased semiconductor diodes, Zener breakdown semiconductor diodes, avalanche breakdown semiconductor diodes, punch-through semiconductor bipolar junction transistor diodes, and fold-back semiconductor bidirectional transistor diodes, as well as component construction; characteristics; ratings; and application examples.
language	English
title	IEEE Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment Ports -- Part 3: Silicon PN-Junction	en
title	IEEE Std C62.42.3-2017	num
type	standard
page	42
tree	IEEE - The Institute of Electrical and Electronics Engineers, Inc.:;2018
contenttype	fulltext
subject keywords	IEEE C62.42.3(TM)
subject keywords	PN-junction
subject keywords	Zener breakdown
subject keywords	avalanche breakdown
subject keywords	clamping
subject keywords	diode
subject keywords	fold back
subject keywords	forward biased
subject keywords	punch-through
subject keywords	silicon
subject keywords	Avalanche breakdown
subject keywords	Clamping
subject keywords	IEEE Standards
subject keywords	Surge protection
subject keywords	IEEE standards
subject keywords	Zener diodes
subject keywords	Zener effect
subject keywords	avalanche breakdown
subject keywords	bipolar transistors
subject keywords	elemental semiconductors
subject keywords	p-n junctions
subject keywords	silicon
subject keywords	surge protection
subject keywords	IEEE C62 guide series
subject keywords	IEEE guide
subject keywords	SPD
subject keywords	Zener breakdown semiconductor diodes
subject keywords	avalanche breakdown semiconductor diodes
subject keywords	component construction
subject keywords	equipment ports
subject keywords	fold-back semiconductor bidirectional transistor diodes
subject keywords	forward biased semiconductor diodes
subject keywords	punch-through semiconductor bipolar junction transistor diodes
subject keywords	silicon PN-junction clamping diode SPC
subject keywords	surge protective components
subject keywords	surge protective devices
subject keywords	technology variants
identifier DOI	10.1109/IEEESTD.2018.8316271