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JSA JIS C 2162
Test method of long-term reliability of gate insulator for SiC devices at high temperature
Organization:
JSA - Japanese Standards Association
Year: 2014
Abstract: This Japanese Industrial Standard specifies the matters related to the "long-term reliability test of gate insulator for silicon carbide (SiC) devices at high temperature" (hereafter referred to as the "long-term reliability test"), namely, the test apparatus used, the structure of a sample, the method for eliminating the effect of defects in an SiC substrate and the test procedure.
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| contributor author | JSA - Japanese Standards Association | |
| date accessioned | 2017-09-04T18:20:59Z | |
| date available | 2017-09-04T18:20:59Z | |
| date copyright | 2010.03.23 (R 2014) | |
| date issued | 2014 | |
| identifier other | HXPTKEAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std/handle/yse/203446 | |
| description abstract | This Japanese Industrial Standard specifies the matters related to the "long-term reliability test of gate insulator for silicon carbide (SiC) devices at high temperature" (hereafter referred to as the "long-term reliability test"), namely, the test apparatus used, the structure of a sample, the method for eliminating the effect of defects in an SiC substrate and the test procedure. | |
| language | English | |
| title | JSA JIS C 2162 | num |
| title | Test method of long-term reliability of gate insulator for SiC devices at high temperature | en |
| type | standard | |
| page | 14 | |
| status | Active | |
| tree | JSA - Japanese Standards Association:;2014 | |
| contenttype | fulltext |