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JEDEC JESD24-3
Thermal Impedance Measurements for Vertical Power MOSFETs (Delta Source-Drain Voltage Method) - Addendum to JEDEC JESD 24
Organization:
JEDEC - Solid State Technology Association
Year: 2002
Abstract: The purpose of this test method is to measure the thermal impedance of the MOSFET under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity if the forward voltage drop of the source-drain is used as the junction temperature indicator. This method is particularly suitable to enhancement mode, power MOSFETs having relatively long thermal response times. This test method may be used to measure the thermal response of junction to a heating pulse, to ensure proper die mountdown to its case, or the dc thermal resistance, by the proper choice of the pulse duration and magnitude if the heating pulse.
Subject: Delta Source-Drain Voltage Method
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| contributor author | JEDEC - Solid State Technology Association | |
| date accessioned | 2017-09-04T17:18:22Z | |
| date available | 2017-09-04T17:18:22Z | |
| date copyright | 11/01/1990 (R 2002) | |
| date issued | 2002 | |
| identifier other | ZKTZJBAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;quessionid=2A40ear/handle/yse/141731 | |
| description abstract | The purpose of this test method is to measure the thermal impedance of the MOSFET under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity if the forward voltage drop of the source-drain is used as the junction temperature indicator. This method is particularly suitable to enhancement mode, power MOSFETs having relatively long thermal response times. This test method may be used to measure the thermal response of junction to a heating pulse, to ensure proper die mountdown to its case, or the dc thermal resistance, by the proper choice of the pulse duration and magnitude if the heating pulse. | |
| language | English | |
| title | JEDEC JESD24-3 | num |
| title | Thermal Impedance Measurements for Vertical Power MOSFETs (Delta Source-Drain Voltage Method) - Addendum to JEDEC JESD 24 | en |
| type | standard | |
| page | 22 | |
| status | Active | |
| tree | JEDEC - Solid State Technology Association:;2002 | |
| contenttype | fulltext | |
| subject keywords | Delta Source-Drain Voltage Method | |
| subject keywords | MOSFETs | |
| subject keywords | Thermal Impedance Measurements - Vertical Power MOSFETs | |
| subject keywords | Vertical Power MOSFETs |