JEDEC EIA-318-B
Measurement of Reverse Recovery Time for Semiconductor Signal Diodes
contributor author | JEDEC - Solid State Technology Association | |
date accessioned | 2017-09-04T18:37:25Z | |
date available | 2017-09-04T18:37:25Z | |
date copyright | 07/01/1996 (R 1999) | |
date issued | 1999 | |
identifier other | JNJTCBAAAAAAAAAA.pdf | |
identifier uri | https://yse.yabesh.ir/std/handle/yse/219293 | |
description abstract | This standard describes the measurement of signal diodes (IF <=500mA dc) reverse recovery times of less than 300 ns duration. It may, however, also be used for the measurement of longer recovery times. This standard is also intended to establish a method which to characterize the test fixture used for this measurement. | |
language | English | |
title | JEDEC EIA-318-B | num |
title | Measurement of Reverse Recovery Time for Semiconductor Signal Diodes | en |
type | standard | |
page | 19 | |
status | Active | |
tree | JEDEC - Solid State Technology Association:;1999 | |
contenttype | fulltext | |
subject keywords | Diodes | |
subject keywords | Measurement | |
subject keywords | Reverse Recovery Time | |
subject keywords | Signal Diodes |