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Measurement of Reverse Recovery Time for Semiconductor Signal Diodes

contributor authorJEDEC - Solid State Technology Association
date accessioned2017-09-04T18:37:25Z
date available2017-09-04T18:37:25Z
date copyright07/01/1996 (R 1999)
date issued1999
identifier otherJNJTCBAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/219293
description abstractThis standard describes the measurement of signal diodes (IF <=500mA dc) reverse recovery times of less than 300 ns duration. It may, however, also be used for the measurement of longer recovery times. This standard is also intended to establish a method which to characterize the test fixture used for this measurement.
languageEnglish
titleJEDEC EIA-318-Bnum
titleMeasurement of Reverse Recovery Time for Semiconductor Signal Diodesen
typestandard
page19
statusActive
treeJEDEC - Solid State Technology Association:;1999
contenttypefulltext
subject keywordsDiodes
subject keywordsMeasurement
subject keywordsReverse Recovery Time
subject keywordsSignal Diodes


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