JEDEC JESD24-6

Thermal Impedance Measurements for Insulated Gate Bipolar Transistors - Addendum to JEDEC JESD 24

contributor author	JEDEC - Solid State Technology Association
date accessioned	2017-09-04T18:47:23Z
date available	2017-09-04T18:47:23Z
date copyright	10/01/1991 (R 2002)
date issued	2002
identifier other	KLTZJBAAAAAAAAAA.pdf
identifier uri	https://yse.yabesh.ir/std/handle/yse/228526
description abstract	This standard describes in detail the method for thermal measurements of Insulated Gate Bipolar Transistors (IGBTs) and is suitable for use both in manufacturing and application of the devices. The method covers both thermal transient and thermal equilibrium measurements for manufacturing process control and device characterization purposes. Properly implemented, JESD24-6 provides a basis for obtaining realistic thermal parametric values that will benefit supplier's internal effectiveness and will be useful to the design and manufacturer of reliable IGBT circuits.
language	English
title	JEDEC JESD24-6	num
title	Thermal Impedance Measurements for Insulated Gate Bipolar Transistors - Addendum to JEDEC JESD 24	en
type	standard
page	20
status	Active
tree	JEDEC - Solid State Technology Association:;2002
contenttype	fulltext
subject keywords	Bipolar Transistors - Insulated Gate
subject keywords	Insulated Gate Bipolar Transistors (IGBT)
subject keywords	Thermal Impedance Measurements - IGBT
subject keywords	Transistors - Insulated Bipolar Gate