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IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components--Corrigendum 1
IEEE Std C62.35-2010/Cor 1-2018 (Corrigendum to IEEE Std C62.35-2010)
Year: 2018
Abstract: Avalanche breakdown diodes used for surge protection on systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode that can operate in either the forward or reverse direction of its V-I characteristic. This component is a single package, which may be assembled from any combination of series and/or parallel diode chips. This standard contains definitions, service conditions, and a series of test criteria for determining the electrical characteristics and verifying ratings of these avalanche breakdown diodes. If the characteristics differ with the direction of conduction, then each direction of conduction shall be separately specified.
Subject: avalanche breakdown diode
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IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components--Corrigendum 1
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| contributor author | IEEE - The Institute of Electrical and Electronics Engineers, Inc. | |
| date accessioned | 2019-07-24T09:05:45Z | |
| date available | 2019-07-24T09:05:45Z | |
| date issued | 2018 | |
| identifier isbn | 978-1-5044-5314 | |
| identifier other | 08577048.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/273585 | |
| description abstract | Avalanche breakdown diodes used for surge protection on systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode that can operate in either the forward or reverse direction of its V-I characteristic. This component is a single package, which may be assembled from any combination of series and/or parallel diode chips. This standard contains definitions, service conditions, and a series of test criteria for determining the electrical characteristics and verifying ratings of these avalanche breakdown diodes. If the characteristics differ with the direction of conduction, then each direction of conduction shall be separately specified. | |
| language | English | |
| title | IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components--Corrigendum 1 | en |
| title | IEEE Std C62.35-2010/Cor 1-2018 (Corrigendum to IEEE Std C62.35-2010) | num |
| type | Standard | |
| page | 11 | |
| tree | IEEE - The Institute of Electrical and Electronics Engineers, Inc.:;2018 | |
| contenttype | Fulltext | |
| subject keywords | avalanche breakdown diode | |
| subject keywords | ABD | |
| subject keywords | avalanche junction semiconductor | |
| subject keywords | breakdown voltage | |
| subject keywords | C62.35 | |
| subject keywords | clamping | |
| subject keywords | communication circuits | |
| subject keywords | corrigendum | |
| subject keywords | impulse | |
| subject keywords | limiting | |
| subject keywords | power circuits | |
| subject keywords | silicon avalanche diode | |
| subject keywords | SAD | |
| subject keywords | surge protective component | |
| subject keywords | SPC | |
| subject keywords | stand-by current | |
| subject keywords | surge | |
| subject keywords | surge-protective device | |
| subject keywords | surge protector | |
| subject keywords | SPD | |
| subject keywords | transient voltage suppressor | |
| subject keywords | TVS | |
| subject keywords | zener | |
| subject keywords | IEEE Standards | |
| subject keywords | Avalanche breakdown | |
| subject keywords | Surge protection | |
| subject keywords | Semiconductor devices | |
| identifier DOI | 10.1109/IEEESTD.2018.8577048 |