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English -- Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects - Edition 1.0
IEC 63068-1
Organization:
IEC - International Electrotechnical Commission
Year: 2019
Abstract: Scope: This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
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English -- Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects - Edition 1.0
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| contributor author | IEC - International Electrotechnical Commission | |
| date accessioned | 2020-09-15T22:28:48Z | |
| date available | 2020-09-15T22:28:48Z | |
| date copyright | 2019.01.01 | |
| date issued | 2019 | |
| identifier other | ZTSXGGAAAAAAAAAA.pdf | |
| identifier other | ZTSXGGAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/289115 | |
| description abstract | Scope: This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images. | |
| language | English | |
| title | English -- Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects - Edition 1.0 | en |
| title | IEC 63068-1 | num |
| type | standard | |
| page | 28 | |
| status | Active | |
| tree | IEC - International Electrotechnical Commission:;2019 | |
| contenttype | fulltext |