French -- Circuits intégrés – Circuits intégrés tridimensionnels – Partie 3: Modèle et conditions de mesure des trous de liaison à travers le silicium - Edition 1.0|English -- Integrated circuits – Three dimensional integrated circuits – Part 3: Model and measurement conditions of through-silicon via - Edition 1.0

Abstract

Scope: This part of IEC 63011 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC. 3-D IC specifications covered by this document are the following: • application: digital consumer and mobile; • operating voltage: 0,1 V to 5,0 V, • operating frequency: less than 2,0 GHz. This document does not describe the equipment for the measurement. Figure 1 describes a typical case of multi-chip interconnect system discussed in this document. Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document