JEDEC JEP110

Guidelines for the Measurement of Thermal Resistance of GaAs FETs

contributor author	JEDEC - Solid State Technology Association
date accessioned	2017-09-04T15:23:30Z
date available	2017-09-04T15:23:30Z
date copyright	07/01/1988
date issued	1988
identifier other	NFKGCAAAAAAAAAAA.pdf
identifier uri	https://yse.yabesh.ir/std/handle/yse/23760
description abstract	This publication is intended for power GaAs FET applications requiring high reliability. An accurate measurement of thermal resistance is extremely important to provide the user with knowledge of the FETs operating temperature so that more accurate life estimates can be made. FET failure mechanisms and failure rates have, in general, an exponential dependence on temperature (which is why temperature-accelerated testing is successful). Because of the exponential relationship of failure rate with temperature, the thermal resistance should be referenced to the hottest part of the FET.
language	English
title	JEDEC JEP110	num
title	Guidelines for the Measurement of Thermal Resistance of GaAs FETs	en
type	standard
page	11
status	Active
tree	JEDEC - Solid State Technology Association:;1988
contenttype	fulltext
subject keywords	GaAs FETs
subject keywords	Measurement - Thermal Resistance of GaAs FETs
subject keywords	Thermal Resistance - GaAs FETs