• 0
    • ارسال درخواست
    • حذف همه
    • Industrial Standards
    • Defence Standards
  • درباره ما
  • درخواست موردی
  • فهرست استانداردها
    • Industrial Standards
    • Defence Standards
  • راهنما
  • Login
  • لیست خرید شما 0
    • ارسال درخواست
    • حذف همه
View Item 
  •   YSE
  • Industrial Standards
  • JEDEC - Solid State Technology Association
  • View Item
  •   YSE
  • Industrial Standards
  • JEDEC - Solid State Technology Association
  • View Item
  • All Fields
  • Title(or Doc Num)
  • Organization
  • Year
  • Subject
Advanced Search
JavaScript is disabled for your browser. Some features of this site may not work without it.

Archive

JEDEC JEP110

Guidelines for the Measurement of Thermal Resistance of GaAs FETs

Organization:
JEDEC - Solid State Technology Association
Year: 1988

Abstract: This publication is intended for power GaAs FET applications requiring high reliability. An accurate measurement of thermal resistance is extremely important to provide the user with knowledge of the FETs operating temperature so that more accurate life estimates can be made. FET failure mechanisms and failure rates have, in general, an exponential dependence on temperature (which is why temperature-accelerated testing is successful). Because of the exponential relationship of failure rate with temperature, the thermal resistance should be referenced to the hottest part of the FET.
URI: https://yse.yabesh.ir/std/handle/yse/23760
Subject: GaAs FETs
Collections :
  • JEDEC - Solid State Technology Association
  • Download PDF : (440.0Kb)
  • Show Full MetaData Hide Full MetaData
  • Statistics

    JEDEC JEP110

Show full item record

contributor authorJEDEC - Solid State Technology Association
date accessioned2017-09-04T15:23:30Z
date available2017-09-04T15:23:30Z
date copyright07/01/1988
date issued1988
identifier otherNFKGCAAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/23760
description abstractThis publication is intended for power GaAs FET applications requiring high reliability. An accurate measurement of thermal resistance is extremely important to provide the user with knowledge of the FETs operating temperature so that more accurate life estimates can be made. FET failure mechanisms and failure rates have, in general, an exponential dependence on temperature (which is why temperature-accelerated testing is successful). Because of the exponential relationship of failure rate with temperature, the thermal resistance should be referenced to the hottest part of the FET.
languageEnglish
titleJEDEC JEP110num
titleGuidelines for the Measurement of Thermal Resistance of GaAs FETsen
typestandard
page11
statusActive
treeJEDEC - Solid State Technology Association:;1988
contenttypefulltext
subject keywordsGaAs FETs
subject keywordsMeasurement - Thermal Resistance of GaAs FETs
subject keywordsThermal Resistance - GaAs FETs
DSpace software copyright © 2017-2020  DuraSpace
نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
yabeshDSpacePersian
 
DSpace software copyright © 2017-2020  DuraSpace
نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
yabeshDSpacePersian